The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Mar. 30, 2012
Satoru Sugiyama, Tokyo, JP;
Yuuta Nishioka, Tokyo, JP;
Satoru Sugiyama, Tokyo, JP;
Yuuta Nishioka, Tokyo, JP;
PS4 Luxco S.a.r.l., Luxembourg, LU;
Abstract
A semiconductor device is provided, which includes an annular insulation separation portion penetrating a semiconductor substrate, and an electrode penetrating the semiconductor substrate in a region surrounded by the annular insulation separation portion, wherein the insulation separation portion includes at least a first film that gives compressive stress in a depth direction on the side of a substrate, a second film that gives tensile stress in the depth direction is formed on the first film, and film thicknesses of the first and second films are adjusted so that the compressive stress and the tensile stress are almost balanced.