The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jan. 18, 2012
Jeffrey P. Gambino, Westford, VT (US);
Russell T. Herrin, Essex Junction, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Laura J. Schutz, Burlington, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Russell T. Herrin, Essex Junction, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Laura J. Schutz, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method patterns a polysilicon gate over two immediately adjacent, opposite polarity transistor devices. The method patterns a mask over the polysilicon gate. The mask has an opening in a location where the opposite polarity transistor devices abut one another. The method then removes some (a portion) of the polysilicon gate through the opening to form at least a partial recess (or potentially a complete opening) in the polysilicon gate. The recess separates the polysilicon gate into a first polysilicon gate and a second polysilicon gate. After forming the recess, the method dopes the first polysilicon gate using a first polarity dopant and dopes the second polysilicon gate using a second polarity dopant having an opposite polarity of the first polarity dopant.