The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Aug. 08, 2011
Applicant:
Jeesung Jung, Campbell, CA (US);
Inventor:
Jeesung Jung, Campbell, CA (US);
Assignee:
Monolithic Power Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 31/113 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower than the Pwell; and forming an N-type source and a drain contact region. Wherein the body curvature of the LDMOS device is controlled by adjusting the layout width of the Pwell.