The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
May. 31, 2012
Applicant:
Alexander Usenko, Painted Post, NY (US);
Inventor:
Alexander Usenko, Painted Post, NY (US);
Assignee:
Corning Incorporated, Corning, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 51/56 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 51/56 (2013.01); H01L 21/02252 (2013.01);
Abstract
A direct wafer bonding process for joining GaN and silicon substrates involves pre-treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.