The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 02, 2009
Bill Sinclair, Manotick, CA;
Jens Schmid, Ottawa, CA;
Philip Waldron, Ottawa, CA;
Dan-xia Xu, Ottawa, CA;
Adam Densmore, Orleans, CA;
Trevor Mischki, Ottawa, CA;
Greg Lopinski, Ottawa, CA;
Jean Lapointe, Ottawa, CA;
Daniel Poitras, Ottawa, CA;
Siegfried Janz, Ottawa, CA;
Bill Sinclair, Manotick, CA;
Jens Schmid, Ottawa, CA;
Philip Waldron, Ottawa, CA;
Dan-Xia Xu, Ottawa, CA;
Adam Densmore, Orleans, CA;
Trevor Mischki, Ottawa, CA;
Greg Lopinski, Ottawa, CA;
Jean Lapointe, Ottawa, CA;
Daniel Poitras, Ottawa, CA;
Siegfried Janz, Ottawa, CA;
National Research Council of Canada, Ottawa, CA;
Abstract
A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.