The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jun. 26, 2009
Applicants:
Koki Yano, Sodegaura, JP;
Hirokazu Kawashima, Sodegaura, JP;
Inventors:
Koki Yano, Sodegaura, JP;
Hirokazu Kawashima, Sodegaura, JP;
Assignee:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/00 (2006.01); H01L 29/786 (2006.01); C23C 14/08 (2006.01); C04B 35/453 (2006.01); C04B 35/01 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C04B 2235/3286 (2013.01); H01L 21/02565 (2013.01); H01L 21/02554 (2013.01); H01L 29/7869 (2013.01); H01L 21/02631 (2013.01); C04B 2235/725 (2013.01); C23C 14/08 (2013.01); H01L 21/02592 (2013.01); C04B 35/453 (2013.01); C04B 2235/5409 (2013.01); C04B 35/01 (2013.01); C04B 2235/404 (2013.01); C04B 2235/40 (2013.01); C04B 2235/3284 (2013.01);
Abstract
Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2θ=62 to 63 degrees to the maximum peak of InGaO(ZnO) is not more than 3%.