The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 16, 2011
Guomin Mao, San Jose, CA (US);
Guomin Mao, San Jose, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A method according to one embodiment includes depositing a dielectric hard mask layer above a polymer mask under-layer; forming a photoresist mask above the hard mask layer; transferring the image of the photoresist mask onto the hard mask layer using reactive ion etching, thereby defining a hard mask; determining that a critical dimension bias of the hard mask is within or outside a specification; and changing a level of an input source power used during a subsequent reactive ion etching step to move the critical dimension bias towards a target critical dimension bias when the critical dimension bias of the hard mask is outside the specification. Additional embodiments are also disclosed.