The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Oct. 18, 2005
Yoshinori Honda, Kanagawa-ken, JP;
Takayuki Ichihara, Tokyo, JP;
Hiroyuki Nakagawa, Kanagawa, JP;
Kiwamu Tanahashi, Tokyo, JP;
Yoshinori Honda, Kanagawa-ken, JP;
Takayuki Ichihara, Tokyo, JP;
Hiroyuki Nakagawa, Kanagawa, JP;
Kiwamu Tanahashi, Tokyo, JP;
HGST Netherlands B.V., Amsterdam, NL;
Abstract
Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiOfor deposition on the intermediate layer. The top surface of the insulation material (SiO) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.