The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Jul. 13, 2011
Applicants:

Yuji Kimura, Otsu, JP;

Hiroki Horiguchi, Ritto, JP;

Inventors:

Yuji Kimura, Otsu, JP;

Hiroki Horiguchi, Ritto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 31/02 (2006.01); H01L 21/44 (2006.01); H01L 21/441 (2006.01); B81C 3/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B81C 3/001 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/15165 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/01079 (2013.01); B81C 1/00269 (2013.01); H01L 2924/15153 (2013.01); B81C 2203/036 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/01004 (2013.01); H01L 24/97 (2013.01); H01L 24/32 (2013.01); B81C 2203/019 (2013.01); H01L 2924/09701 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/16 (2013.01); H01L 2924/16195 (2013.01); H01L 2924/01327 (2013.01); H01L 24/48 (2013.01); B81C 2203/0109 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/166 (2013.01); H01L 24/16 (2013.01);
Abstract

In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.


Find Patent Forward Citations

Loading…