The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 19, 2007
Jinqiu Zhang, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Yong Shen, Saratoga, CA (US);
Yizhong Wang, Woodbury, MN (US);
Hai Sun, Milpitas, CA (US);
LI He, Fremont, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Yong Shen, Saratoga, CA (US);
Yizhong Wang, Woodbury, MN (US);
Hai Sun, Milpitas, CA (US);
Li He, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method provides a PMR transducer. In one aspect, the method includes forming a trench in an intermediate layer using reactive ion etch(es). The trench top is wider than its bottom. In this aspect, the method also includes providing a seed layer using atomic layer deposition and providing a PMR pole on the seed layer. Portion(s) of the seed layer and PMR pole reside in the trench. In another aspect, the method includes providing a mask including a trench having a top wider than its bottom. In this aspect, the method includes providing mask material in the trench, providing an intermediate layer on the mask material and removing the mask material to provide another trench in the intermediate layer. In this aspect, the method also includes providing a PMR pole in the additional trench.