The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Mar. 06, 2012
Applicants:

Katsuaki Matsui, Kanagawa, JP;

Junya Ogawa, Kanagawa, JP;

Inventors:

Katsuaki Matsui, Kanagawa, JP;

Junya Ogawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory quickly and precisely accumulates a desired amount of charges corresponding to data-to-be-written in a charge accumulating part of a memory cell. When charges are injected into the charge accumulating part of the memory cell by applying a writing voltage corresponding to the data-to-be-written to the drain or source region of the memory cell, the writing voltage is reduced on the basis of an increase in the amount of charges accumulated in the charge accumulating part.


Find Patent Forward Citations

Matsui, Katsuaki. (2014). Nonvolatile semiconductor memory device and data writing method (U.S. Patent No. 8792287). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8792287

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…