The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Jul. 10, 2012
Applicants:

Ho-chul Lee, Seoul, KR;

Doogon Kim, Hwaseong-si, KR;

Jinman Han, Seoul, KR;

Inventors:

Ho-Chul Lee, Seoul, KR;

Doogon Kim, Hwaseong-si, KR;

Jinman Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/16 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/14 (2013.01); G11C 16/0483 (2013.01);
Abstract

A nonvolatile memory device configured to apply a wordline erase voltage to a plurality of wordlines connected to a plurality of memory cells, apply an erase voltage to a substrate where a memory cell string is formed while applying a specific voltage to at least one ground selection line connected to at least one ground selection transistor, and float the at least one ground selection line when a target voltage of the substrate reaches a target voltage.


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