The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Sep. 13, 2012
Rintaro Koda, Tokyo, JP;
Hideki Watanabe, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Shunsuke Kono, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Hideki Watanabe, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Shunsuke Kono, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.