The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Mar. 22, 2012
Ali Darwish, Laurel, MD (US);
Thomas J. Farm, Washington, DC (US);
Mona Zaghloul, Bethesda, MD (US);
Ali Darwish, Laurel, MD (US);
Thomas J. Farm, Washington, DC (US);
Mona Zaghloul, Bethesda, MD (US);
The United States of America as Represented by the Secretary of the Army, Washington, DC (US);
The George Washington University, Washington, DC (US);
Abstract
An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.