The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Mar. 21, 2011
Applicants:

Hiroyuki Kutsukake, Yokohama, JP;

Yoshiko Kato, Yokohama, JP;

Yoshihisa Watanabe, Yokohama, JP;

Koichi Fukuda, Yokohama, JP;

Kazunori Masuda, Yokohama, JP;

Inventors:

Hiroyuki Kutsukake, Yokohama, JP;

Yoshiko Kato, Yokohama, JP;

Yoshihisa Watanabe, Yokohama, JP;

Koichi Fukuda, Yokohama, JP;

Kazunori Masuda, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/92 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.


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