The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Dec. 19, 2012
Denso Corporation, Kariya, JP;
Youichi Ashida, Nukata-gun, JP;
Shigeki Takahashi, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of the drift layer, a second conductivity type channel layer formed in the surface portion of the drift layer, a first conductivity type emitter region formed in a surface portion of the channel layer, and a hole stopper region formed in the drift layer and located between the collector region and the emitter region. Holes are injected from the collector region into the drift layer and flow toward the emitter region through a hole path. The hole stopper region blocks a flow of the holes and narrows the hole path to concentrate the holes.