The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Mar. 31, 2011
Kyung Hee YE, Ansan-si, KR;
Chang Youn Kim, Ansan-si, KR;
Jin Cheol Shin, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Jong Kyun You, Ansan-si, KR;
Hong Chol Lim, Ansan-si, KR;
Kyung Hee Ye, Ansan-si, KR;
Chang Youn Kim, Ansan-si, KR;
Jin Cheol Shin, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Jong Kyun You, Ansan-si, KR;
Hong Chol Lim, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.