Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device

Abstract

An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structureformed from an AlInGaN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structureincludes an active layer regionhaving an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λand λ, respectively, and thicknesses of the semiconductor chipsof the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as dand d, respectively, the following relations are satisfied: λand d<d