The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Dec. 04, 2012
Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Dae-Ho Kim, Daegu, KR;

Hyun-Jae Na, Seoul, KR;

Yong-Su Lee, Hwaseong-si, KR;

Myoung-Geun Cha, Seoul, KR;

Yoon-Ho Khang, Yongin-si, KR;

Sang-Gab Kim, Seoul, KR;

Jae-Neung Kim, Seongnam-si, KR;

Se-Hwan Yu, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.


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