The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Jul. 27, 2010
Shoichi Kawashima, Kawasaki, JP;
Takeshi Kawashima, Tokyo, JP;
Yasuhiro Nagatomo, Kawasaki, JP;
Katsuyuki Hoshino, Tokyo, JP;
Shoichi Kawashima, Kawasaki, JP;
Takeshi Kawashima, Tokyo, JP;
Yasuhiro Nagatomo, Kawasaki, JP;
Katsuyuki Hoshino, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.