The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Sep. 03, 2012
Applicant:
Chiaki Kudou, Hyogo, JP;
Inventor:
Chiaki Kudou, Hyogo, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication method for a semiconductor device includes the step of forming a gate insulating film on the side of a trench, the bottom thereof, and the periphery thereof. The step of forming a gate insulating film includes a step of forming a first insulating film on the side of the trench and a step of forming a second insulating film on the bottom and periphery of the trench using a high-density plasma chemical vapor deposition method. The thickness of the portions of the gate insulating film formed on the bottom and periphery of the trench is made larger than that of the portion of the gate insulating film formed on the side of the trench.