The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Dec. 05, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae Hyoung Choi, Gyeonggi-do, KR;

Ki Yeon Park, Gyeonggi-do, KR;

Joon Kim, Seoul, KR;

Cha Young Yoo, Gyeonggi-do, KR;

Youn Soo Kim, Gyeonggi-do, KR;

Ho Jun Kwon, Seoul, KR;

Sang Yeol Kang, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.


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