The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Mar. 19, 2012
Applicant:

Takanobu Akagi, Yokohama, JP;

Inventor:

Takanobu Akagi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method of a semiconductor element comprises the steps of (a) preparing a growth substrate, (b) forming a semiconductor layer on the growth substrate, (c) dividing the semiconductor layer into a plurality of elements while leaving at least a part of the semiconductor layer between each element to form a sacrificial layer around each element, (d) forming a metal layer on the semiconductor layer, (e) bonding a supporting substrate to the semiconductor layer via the metal layer, and (f) removing the growth substrate from the semiconductor layer by irradiating a laser whose area of irradiation covers each element within an outline of the sacrificial layer of each element.


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