The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Jul. 23, 2007
Applicants:
Hironori Yamamoto, Tokyo, JP;
Fuminori Ito, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Inventors:
Hironori Yamamoto, Tokyo, JP;
Fuminori Ito, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); H01L 21/312 (2006.01); C07F 7/21 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained.