The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Jul. 16, 2008
Applicants:

Kenneth L. Dudley, Newport News, VA (US);

Holly a Elliott, Newport News, VA (US);

John W. Connell, Yorktown, VA (US);

Joseph G. Smith, Smithfield, VA (US);

Sayata Ghose, Newport News, VA (US);

Kent A. Watson, New Kent, VA (US);

Donavon Mark Delozier, Disputanta, VA (US);

Inventors:

Kenneth L. Dudley, Newport News, VA (US);

Holly A Elliott, Newport News, VA (US);

John W. Connell, Yorktown, VA (US);

Joseph G. Smith, Smithfield, VA (US);

Sayata Ghose, Newport News, VA (US);

Kent A. Watson, New Kent, VA (US);

Donavon Mark Delozier, Disputanta, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); C08K 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dielectric material includes a network of nanosubstrates, such as but not limited to nanotubes, nanosheets, or other nanomaterials or nanostructures, a polymer base material or matrix, and nanoparticles constructed at least partially of an elemental metal. The network has a predetermined nanosubstrate loading percentage by weight with respect to a total weight of the dielectric material, and a preferential or predetermined longitudinal alignment with respect to an orientation of an incident electrical field. A method of forming the dielectric material includes depositing the metal-based nanoparticles onto the nanosubstrates and subsequently mixing these with a polymer matrix. Once mixed, alignment can be achieved by melt extrusion or a similar mechanical shearing process. Alignment of the nanosubstrate may be in horizontal or vertical direction with respect to the orientation of an incident electrical field.


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