The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8790533 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 29, 2014

Filed:

Dec. 28, 2010
Applicants:

Seung Koo Shin, Pohang-si, KR;

Won Jung Kim, Seoul, KR;

Sung Jun Lim, Pohang-si, KR;

Inventors:

Seung Koo Shin, Pohang-si, KR;

Won Jung Kim, Seoul, KR;

Sung Jun Lim, Pohang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C03C 25/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching of the surface of the nanocrystals, thereby reproducibly controlling properties of semiconductor nanocrystals including absorption wavelength, emission wavelength, emission intensity, average size, size distribution, shape, and surface state.


Find Patent Forward Citations

Shin, Seung. (2014). Method of etching semiconductor nanocrystals (U.S. Patent No. 8790533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8790533

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