The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Aug. 24, 2005
Applicants:
Takayuki Maruyama, Kodaira, JP;
Toshimi Chiba, Kodaira, JP;
Inventors:
Takayuki Maruyama, Kodaira, JP;
Toshimi Chiba, Kodaira, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a method for manufacturing the silicon carbide single crystal wafer capable of improving the utilization ratio of the bulk silicon carbide single crystal, capable of improving characteristics of the element and capable of improving cleavability, and the silicon carbide single crystal wafer obtained by the manufacturing method. An α(hexagonal)-silicon carbide single crystal wafer which has a flat homoepitaxial growth surface with a surface roughness of 2 nm or less and which has an off-angle from the (0001)c plane of 0.4° or less.