The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jun. 23, 2011
Masaru Kuramoto, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Tomoyuki Oki, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Masaru Kuramoto, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Tomoyuki Oki, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Tohoku University, Miyagi, JP;
Abstract
A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W, and W, W>Wis satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.