The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jan. 23, 2013
Georgi Panov, Munich, DE;
Rinaldo Zinke, Munich, DE;
Georgi Panov, Munich, DE;
Rinaldo Zinke, Munich, DE;
Intel Mobile Communications GmbH, Neubiberg, DE;
Abstract
An amplifier circuit is described comprising a first field effect transistor comprising a first source/drain terminal coupled to a first supply terminal, a second source/drain terminal coupled to an output of the amplifier circuit and a gate terminal; a second field effect transistor comprising a first source/drain terminal coupled to an input of the amplifier circuit, a second source/drain terminal coupled to the gate terminal of the first field effect transistor and a gate terminal; a third field effect transistor comprising a first source/drain terminal coupled to a first bias current source of the amplifier circuit, a second source/drain terminal and a gate terminal coupled to its first source/drain terminal and the gate terminal of the second field effect transistor; a fourth field effect transistor comprising a first source/drain terminal coupled to a second bias current source, a second source/drain terminal coupled to a second supply terminal and a gate terminal coupled to the second source/drain terminal of the third field effect transistor; and a control circuit coupled to the gate of the fourth field effect transistor configured to control the source drain voltage of the fourth field effect transistor by means of the gate of the fourth field effect transistor to be equal to a reference voltage.