The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Nov. 10, 2011
Applicants:

Wuyang Hao, San Diego, CA (US);

Jungwon Suh, San Diego, CA (US);

Inventors:

Wuyang Hao, San Diego, CA (US);

Jungwon Suh, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for a providing temperature-compensated reference voltage are provided. In an example, a temperature-compensated voltage reference circuit includes a current mirror portion and a temperature-compensated output portion coupled to the current mirror portion. The temperature-compensated output portion comprises a very low threshold voltage (Vt) transistor coupled in series with a negative temperature coefficient transistor. The output portion can further include a positive temperature coefficient element coupled in series with the very low Vt transistor. The positive temperature coefficient element can be an adjustable resistive element. The output portion can further include an output transistor having a gate coupled to the current mirror portion and coupled between a supply voltage and the positive temperature coefficient element. The very low Vt transistor can be a substantially zero Vt n-channel metal-oxide-semiconductor (NMOS) transistor, and can be coupled in a diode configuration.


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