The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Aug. 23, 2013
Applicant:

Inoso, Llc, Austin, TX (US);

Inventors:

Kiyoshi Mori, San Antonio, TX (US);

Ziep Tran, Austin, TX (US);

Giang T. Dao, Milpitas, CA (US);

Michael E. Ramon, Austin, TX (US);

Assignee:

INOSO, LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 1/00 (2006.01); B81B 3/00 (2006.01); H03K 3/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods comprising forming at least one IC device on a front surface of a semiconductor substrate. The at least one IC device includes at least one circuit block and at least one power switch circuit. A dielectric layer is deposited on the IC device, and first and second electromechanical power switches are formed on the dielectric layer. The first power switch gates a voltage to the circuit block and the second power switch gates the voltage to the IC device. The first power switch is actuated by the power switch circuit, and the voltage to the circuit block is switched off. Alternatively, the second power switch is actuated by the power switch circuit, and the voltage to the IC device is switched off.


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