The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Oct. 19, 2009
Tadayoshi Muta, Honjo, JP;
Tadayoshi Muta, Honjo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor apparatus with a penetrating electrode having a high aspect ratio is manufactured with a low-temperature process. In one embodiment a first electrodeand a second electrodeof a semiconductor substratethat are provided at the front and rear surface sides, respectively, are electrically connected by a conductive objectfilled in a contact holeand an extended portionof the second electrodeextends to the contact hole. Even though the contact holehas a high aspect ratio, film formation using the low-temperature process is enabled by using the conductive object, instead of forming the second electrodeon a bottom portion of the contact hole