The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jun. 08, 2011
Applicants:
Kentaro Watanabe, Anan, JP;
Giichi Marutsuki, Itano-gun, JP;
Yuya Yamakami, Komatsushima, JP;
Inventors:
Assignee:
Nichia Corporation, Anan-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.