The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jul. 09, 2012
Applicants:
Hyung-hwan Kim, Gyeonggi-do, KR;
Bong-ho Choi, Gyeonggi-do, KR;
Jin-yul Lee, Gyeonggi-do, KR;
Seung-seok Pyo, Gyeonggi-do, KR;
Inventors:
Hyung-Hwan Kim, Gyeonggi-do, KR;
Bong-Ho Choi, Gyeonggi-do, KR;
Jin-Yul Lee, Gyeonggi-do, KR;
Seung-Seok Pyo, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01);
Abstract
A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.