The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Apr. 19, 2010
Applicant:

Vladislav Vashchenko, Palo Alto, CA (US);

Inventor:

Vladislav Vashchenko, Palo Alto, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/335 (2006.01); H01L 29/778 (2006.01); H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 27/0248 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/0657 (2013.01);
Abstract

In an ultra high voltage lateral GaN structure having a 2DEG region extending between two terminals, an isolation region is provided between the two terminals to provide for reversible snapback.


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