The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Feb. 28, 2013
Applicant:

Renesas Electronics Corporation, Kawasaki, JP;

Inventor:

Yasuyuki Morishita, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/74 (2013.01);
Abstract

An electrostatic protection circuit in a semiconductor device includes a first first-conductivity type well extending in a first direction over a semiconductor substrate, a second first-conductivity type well extending in a second direction over the semiconductor substrate and perpendicular to the first direction with one end coupled to a first long side of the first first-conductivity type well, and a second-conductivity type well formed around the first first-conductivity type well and the second first-conductivity type well. It also includes a first high-concentration second-conductivity type region extending in the second direction on a surface of the second first-conductivity type well and a first high-concentration first-conductivity type region extending in the second direction on a surface of the second-conductivity type well while facing the first high-concentration second-conductivity type region.


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