The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Apr. 11, 2013
Masatoshi Yokoyama, Tochigi, JP;
Tsutomu Murakawa, Isehara, JP;
Kenichi Okazaki, Tochigi, JP;
Masayuki Sakakura, Isehara, JP;
Takuya Matsuo, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yoshitaka Yamamoto, Yamatokoriyama, JP;
Masatoshi Yokoyama, Tochigi, JP;
Tsutomu Murakawa, Isehara, JP;
Kenichi Okazaki, Tochigi, JP;
Masayuki Sakakura, Isehara, JP;
Takuya Matsuo, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yoshitaka Yamamoto, Yamatokoriyama, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
The semiconductor conductor device includes a gate electrode, an oxide semiconductor film, a source electrodeand a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surfaceof the source electrode and a second side surfaceof the drain electrode opposite to the first side surface. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first regionthat is the nearest to one endof the first side surfaceand a second regionthat is the nearest to one endof the second side surface. The first high resistance region has a corrugated side surface or the like.