The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Dec. 02, 2010
Applicants:

Jong-hyun Park, Yongin, KR;

Chun-gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jin-hee Kang, Yongin, KR;

Yul-kyu Lee, Yongin, KR;

Inventors:

Jong-Hyun Park, Yongin, KR;

Chun-Gi You, Yongin, KR;

Sun Park, Yongin, KR;

Jin-Hee Kang, Yongin, KR;

Yul-Kyu Lee, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 21/84 (2006.01); H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.


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