The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jan. 17, 2013
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventors:
George T. Wang, Albuquerque, NM (US);
Qiming Li, Albuquerque, NM (US);
Jonathan J. Wierer, Jr., Albuquerque, NM (US);
Daniel Koleske, Albuquerque, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/15 (2006.01); H01L 33/04 (2010.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); B82Y 40/00 (2013.01); Y10S 977/762 (2013.01);
Abstract
A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.