The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
May. 02, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Junho Jeong, Suwon-si, KR;
Sukhun Choi, Suwon-si, KR;
Jangeun Lee, Suwon-si, KR;
Kyunghyun Kim, Seoul, KR;
Sechung Oh, Suwon-si, KR;
Kyungtae Nam, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/10 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/1625 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/147 (2013.01); H01L 45/144 (2013.01); H01L 45/1616 (2013.01); H01L 27/101 (2013.01); H01L 45/06 (2013.01); H01L 21/7684 (2013.01); H01L 45/08 (2013.01); H01L 43/12 (2013.01); H01L 45/1641 (2013.01); H01L 45/085 (2013.01); H01L 45/143 (2013.01);
Abstract
Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided.