The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Feb. 29, 2012
Yasuo Segawa, Hyogo, JP;
Yasuo Segawa, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.