The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Feb. 15, 2010
Pascal Guenard, Froges, FR;
Frederic Dupont, Seyssins, FR;
Pascal Guenard, Froges, FR;
Frederic Dupont, Seyssins, FR;
SOITEC, Bernin, FR;
Abstract
The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A, of nominal lattice parameter Aand of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A<Aand CTE1≦CTE3 and CTE5>CTE1 or A>Aand CTE1≧CTE3 and CTE5<CTE1.