The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
May. 21, 2013
Applicant:
Integrated Device Technology, Inc., San Jose, CA (US);
Inventor:
Wanling Pan, San Jose, CA (US);
Assignee:
Integrated Device Technology, inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 41/00 (2013.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming micromechanical resonators include forming first and second substrates having first and second semiconductor layers of first and second conductivity type therein, respectively. The first semiconductor layer of first conductivity type is bonded to the second semiconductor layer of second conductivity type to thereby define a first rectifying junction at an interface of the bonded semiconductor layers. A piezoelectric layer is formed on the first rectifying junction and at least a first electrode is formed on the piezoelectric layer.