Method of manufacturing semiconductor light emitting element including re-growth layer for reducing warpage

Abstract

Provided is a method of manufacturing a semiconductor light emitting element that is capable of making a light emitting wavelength distribution σ of a semiconductor light emitting layer that is obtained small. The method includes a process of laminating a re-growth layer of a compound semiconductor layer on the compound semiconductor substrate which is obtained by forming at least one compound semiconductor layer on a substrate and in which a warping amount H is within a range of 50 μm≦H≦250 μm. The method adopts a method of manufacturing a semiconductor light emitting element including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are formed from a compound semiconductor. This method includes: a process of preparing a compound semiconductor substrate which is obtained by forming at least one compound semiconductor layer on a substrate and in which a warping amount H is within a range of 50 μm≦H≦250 μm; and a process of laminating a re-growth layer of the compound semiconductor layer on the compound semiconductor layer of the compound semiconductor substrate in a metalorganic chemical vapor deposition apparatus.