The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
May. 14, 2010
Efrat Lifshitz, Haifa, IL;
Ariel Kigel, Haifa, IL;
Maya Brumer-gilary, Nesher, IL;
Aldona Sashchiuk, Nazareth-Illit, IL;
Lilac Amirav, Hod Hasharon, IL;
Viktoria Kloper, Haifa, IL;
Dima Cheskis, Nesher, IL;
Ruth Osovsky, Rehovot, IL;
Efrat Lifshitz, Haifa, IL;
Ariel Kigel, Haifa, IL;
Maya Brumer-Gilary, Nesher, IL;
Aldona Sashchiuk, Nazareth-Illit, IL;
Lilac Amirav, Hod Hasharon, IL;
Viktoria Kloper, Haifa, IL;
Dima Cheskis, Nesher, IL;
Ruth Osovsky, Rehovot, IL;
Abstract
The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSeSstructure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTeSeor CdTeSstructure.