The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Feb. 16, 2011
Sylvain Paltrier, Voreppe, FR;
Thierry Miguet, Entre-deux-Guiers, FR;
Sylvain Paltrier, Voreppe, FR;
Thierry Miguet, Entre-deux-Guiers, FR;
Societe Francaise de Detecteurs Infrarouges-Sofradir, Chatenay Malabry, FR;
Abstract
A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature.