The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 20, 2013
Hgst Netherlands B.v., Amsterdam, NL;
Stefan Maat, San Jose, CA (US);
Alexander M. Zeltser, San Jose, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has both side shields and an antiparallel structure (APS) top shield. The APS top shield is an antiferromagnetically exchange-coupled top shield that includes an antiparallel (AP) coupled structure and an antiferromagnetic (AF) layer which permits the use of the desired NiFe(x is between 15 and 25 atomic percent) material for the side shields. The APS top shield includes lower and upper ferromagnetic layers with respective antiparallel magnetizations. The antiparallel coupling structure between the two ferromagnetic layers consists of the antiparallel coupling (APC) film, which is typically Ru, Ir or Cr, and one and only one interface film of Co or CoFe. The APS top shield with one and only one Co or CoFe interface film enables the material of the side shields to be formed of the preferred NiFe(x is between 15 and 25 atomic percent) material without over-stabilization of the free layer.