The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

May. 21, 2012
Applicants:

Lung-hai Wu, Taoyuan County, TW;

Chen-kuan Kuo, New Taipei, TW;

Fung-hsu Wu, Taoyuan County, TW;

Cyun-tai Hong, New Taipei, TW;

Chih-haw Wang, New Taipei, TW;

Inventors:

Lung-Hai Wu, Taoyuan County, TW;

Chen-Kuan Kuo, New Taipei, TW;

Fung-Hsu Wu, Taoyuan County, TW;

Cyun-Tai Hong, New Taipei, TW;

Chih-Haw Wang, New Taipei, TW;

Assignee:

BenQ Materials Corporation, Taoyuan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/13 (2006.01); G02F 1/1335 (2006.01); G02F 1/1337 (2006.01); G02B 5/30 (2006.01); B05D 5/06 (2006.01); B05D 3/06 (2006.01);
U.S. Cl.
CPC ...
B05D 3/06 (2013.01); G02B 5/30 (2013.01); B05D 5/06 (2013.01); G02B 5/3083 (2013.01);
Abstract

A patterned phase retardation film is disclosed, which includes substrate, a phase retardation layer on the substrate comprising a plurality of first regions of liquid crystal materials and a plurality of second regions of curable resin, wherein the first regions and the second regions are in a grating stripe structure which is parallel and interleaved with each other the top part of the second regions is formed with at least one inclined plane; and a planarization layer for planarizing the phase retardation layer; wherein the first regions provide a first phase retardation and second regions provide a second phase retardation, the first phase retardation and the second phase retardation have a phase difference of 180°. The method for manufacturing the patterned phase retardation film is also disclosed.


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