The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 30, 2010
Nuria Llombart Juan, Alboraya, ES;
Choonsup Lee, Torrance, CA (US);
Goutam Chattopadhyay, Pasadena, CA (US);
John J. Gill, La Crescenta, CA (US);
Anders J. Skalare, Pasadena, CA (US);
Peter H. Siegel, La Canada, CA (US);
Nuria Llombart Juan, Alboraya, ES;
Choonsup Lee, Torrance, CA (US);
Goutam Chattopadhyay, Pasadena, CA (US);
John J. Gill, La Crescenta, CA (US);
Anders J. Skalare, Pasadena, CA (US);
Peter H. Siegel, La Canada, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.