The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Aug. 18, 2009
Beatrice Bernoux, Tournefeuille, FR;
Rene Escoffier, Mauzac, FR;
Jean Michel Reynes, Pompertuzat, FR;
Beatrice Bernoux, Tournefeuille, FR;
Rene Escoffier, Mauzac, FR;
Jean Michel Reynes, Pompertuzat, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A transistor power switch device comprising an array of vertical transistor elements for carrying current between first and second faces of a semiconductor body. The device also comprises a semiconductor monitor element comprising first and second semiconductor monitor regions in the semiconductor body and a monitor conductive layer distinct from the current carrying conductive layer of the transistor array. The semiconductor monitor element presents semiconductor properties representative of the transistor array. Characteristics of the semiconductor monitor element are measured as representative of characteristics of the transistor array. Source metal ageing of a transistor power switch device is monitored by measuring and recording a parameter which is a function of a sheet resistance of the monitor conductive layer when the transistor power switch device is new and comparing it with its value after operation of the device. A measured current is applied between a first location on an elongate strip element of the monitor conductive layer and a first location on one of a pair of lateral extensions of the strip, and the corresponding voltage developed between a second location on the elongate strip element and the other of said pair of lateral extensions is measured.